收藏本站
IXEN 60N120
IXEN 60N120D1
NPT 3 IGBT
in miniBLOC package
I C25
V CES
= 100 A
= 1200 V
V CE(sat) typ. = 2.1 V
G
C
G
C
miniBLOC, SOT-227 B
E153432 G
E
E
IXEN 60N120
E
IXEN 60N120D1
C = Collector
G = Gate
E = Emitter *
C
E
* Either Emitter terminal can be used as Main or Kelvin Emitter
IGBT
Features
? NPT 3 IGBT
Symbol
Conditions
Maximum Ratings
- low saturation voltage
V CES
V GES
I C25
I C90
I CM
V CEK
t SC
(SCSOA)
P tot
T VJ = 25°C to 150°C
T C = 25°C
T C = 90°C
V GE = ± 15 V; R G = 22 ? ; T VJ = 125°C
RBSOA, Clamped inductive load; L = 100 μH
V CE = 900 V; V GE = ± 15 V; R G = 22 ? ; T VJ = 125°C
non-repetitive
T C = 25°C
1200
± 20
100
65
100
V CES
10
445
V
V
A
A
A
μs
W
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
? optional HiPerFRED TM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
? miniBLOC package
- isolated copper base plate
- screw terminals
- kelvin emitter terminal for easy drive
- industry standard outline
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
? single switches
V CE(sat)
V GE(th)
I CES
I GES
I C = 60 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 2 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
V CE = 0 V; V GE = ± 20 V
4.5
2.1
2.5
0.8
2.7
6.5
0.8
200
V
V
V
mA
mA
nA
? choppers with complementary free
wheeling diode
? phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
t d(on)
80
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
Inductive load, T VJ = 125°C
V CE = 600 V; I C = 60 A
V GE = ±15 V; R G = 22 ?
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = 15 V; I C = 50 A
50
680
30
7.2
4.8
3.8
350
ns
ns
ns
mJ
mJ
nF
nC
R thJC
? 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
0.28 K/W
1-4
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXGE200N60B IGBT 600V ISOPLUS227
IXGN120N60A3 IGBT 200A 600V SOT-227B
IXGN200N60A2 IGBT 600V 200A SOT-227B
IXGN200N60B3 IGBT 300A 600V SOT-227B
IXGN200N60B IGBT FAST 600V 200A SOT-227B
IXGN400N30A3 IGBT 300V SOT-227B
IXGN400N60A3 IGBT 400A 600V SOT-227B
IXGN400N60B3 IGBT 600V 430A SOT-227
相关代理商/技术参数
IXEP2300 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:300-Output ePaper Gate Driver
IXEP2300WB 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:300-Output ePaper Gate Driver
IXEP2300XB 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:300-Output ePaper Gate Driver
IXER20N120 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:NPT3 IGBT in ISOPLUS247
IXER20N120D1 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:NPT3 IGBT in ISOPLUS247
IXER35N120D1 功能描述:IGBT 晶体管 1200V 50A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IXER35N120D1_06 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:NPT3 IGBT with Diode in ISOPLUS247
IXER60N120 功能描述:IGBT 晶体管 60 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube